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| SBD T y p e : C30T04Q 30T0 T04 OUTLINE DRAWING FEATURES *SQUARE-PAK TO-263AB(SMD) Packaged in 24mm Tape and Reel *Dual Diodes - Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 C operation Maximum Ratings Rating Repetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Approx Net Weight: 1.4g Symbol VRRM IO IF(RMS) IFSM Tjw Tstg 250 30 C30T04Q 40 50 Hz Full Sine Wave Tc=104C Resistive Load 33.3 50Hz Full Sine Wave ,1cycle Non-repetitive -40 to +150 -40 to +150 Unit V A A A C C Electrical * Thermal Characteristics Characteristics Peak Reverse Current Peak Forward Voltage Thermal Resistance Symbol IRM VFM Conditions Tj= 25C, VRM= VRRM per arm Tj= 25C, IFM= 15 A per arm Min. Typ. Max. 15 0.55 1.5 Unit mA V C /W Rth(j-c) Junction to Case C_T_ OUTLINE DRAWING (Dimensions in mm) FORWARD CURRENT VS. VOLTAGE C30T04Q/C30T04Q-11A (per Arm) 100 INSTANTANEOUS FORWARD CURRENT (A) 50 20 Tj=25C Tj=150C 10 5 2 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 INSTANTANEOUS FORWARD VOLTAGE (V) 0 180 CONDUCTION ANGLE AVERAGE FORWARD POWER DISSIPATION C30T04Q/C30T04Q-11A (Total) RECT 180 SINE WAVE 24 AVERAGE FORWARD POWER DISSIPATION (W) 20 16 12 8 4 0 0 5 10 15 20 25 30 35 AVERAGE FORWARD CURRENT (A) PEAK REVERSE CURRENT VS. PEAK REVERSE VOLTAGE Tj= 150 C 500 C30T04Q/C30T04Q-11A (per Arm) PEAK REVERSE CURRENT (mA) 200 100 0 10 20 30 40 PEAK REVERSE VOLTAGE (V) AVERAGE REVERSE POWER DISSIPATION C30T04Q/C30T04Q-11A (Total) AVERAGE REVERSE POWER DISSIPATION (W) 16 RECT 180 12 SINE WAVE 8 4 0 0 10 20 30 40 REVERSE VOLTAGE (V) 0 180 CONDUCTION ANGLE AVERAGE FORWARD CURRENT VS. CASE TEMPERATURE V RM =40 V C30T04Q/C30T04Q-11A (Total) RECT 180. SINE WAVE 35 AVERAGE FORWARD CURRENT (A) 30 25 20 15 10 5 0 0 25 50 75 100 125 150 CASE TEMPERATURE (C) SURGE CURRENT RATINGS f=50Hz,Sine Wave,Non-Repetitive,No Load 300 C30T04Q/C30T04Q-11A SURGE FORWARD CURRENT (A) 250 200 150 100 50 0.02s I FSM 0 0.02 0.05 0.1 0.2 0.5 1 2 TIME (s) JUNCTION CAPACITANCE VS. REVERSE VOLTAGE Tj=2 5 C,V m = 20m V RM S ,f= 100 kHz ,Ty pica l V alue C30T04Q/C30T04Q-11A (per Arm) 5000 JUNCTION CAPACITANCE (pF) 2000 1000 500 200 0.5 1 2 5 10 20 50 REVERSE VOLTAGE (V) |
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